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Integration of a heat sink (or slug) and lead in a semiconductor component for improved thermal, surge and Rdson characteristics.

IP.com Disclosure Number: IPCOM000004597D
Publication Date: 2001-Feb-27
Document File: 3 page(s) / 45K

Publishing Venue

The IP.com Prior Art Database

Abstract

The lead or leads of a semiconductor device are formed in such a manner as to also act as a heat sink. This same lead/heat sink can be scaled as to provide a large contact area to the die or the die connection(s) area while retaining standard external to the package connection dimensions. Integration of the function of the lead as an electrical connection and heat sink reduces the number of connections typically used in the industry while enabling intimate contact of the heat sink to the die. This reduction of connections, large contact area, and large effective conductor size of the combined lead/heat sink results in numerous benefits over prior art.

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Integration of a heat sink (or slug) and lead in a semiconductor component for improved thermal, surge and Rdson characteristics.

The lead or leads of a semiconductor device are formed in such a manner as to also act as a heat sink. This same lead/heat sink can be scaled as to provide a large contact area to the die or the die connection(s) area while retaining standard external to the package connection dimensions. Integration of the function of the lead as an electrical connection and heat sink reduces the number of connections typically used in the industry while enabling intimate contact of the heat sink to the die. This reduction of connections, large contact area, and large effective conductor size of the combined lead/heat sink results in numerous benefits over prior art.

One can also use this concept in multiple leads to gain additional benefits, such as using a leads so formed in an over and under die arrangement that would allow heat to escape from a die from both sides.

The invention would be useful in (but not limited to) applications such as MOS Transistors, Power Diodes, Rectifiers or other applications where high power, high current/or large surge currents, enhanced heat dissipation or improved forward voltage issues are of interest.

Figure 1 LEADED HEAT SINK VERSION OF PACKAGE FOR MOS TRANSISTOR

PROCESS FLOW

LEADFRAME IN FIXTURE SOLDER ATTACH DIE SOLDER ATTACH DRAIN LEAD

FIGURE 3 LEADED HEAT SINK VERSION OF TO220 STYLE PACKAGE FOR SCHOTTKY RECTIFIERS

Top view of TO220 style package showing Side view of TO220 style package

heat sink attached to die and soldered to leadframe.

CONCEPT THAT ALLOWS THE SAME LEADFRAME DESIGN TO BE USED FOR BOTH TOP AND BOTTOM OF DIODE PACKAGE