Dismiss
There will be a system update on Friday, May 5th, 6 PM ET. You may experience a brief service interruption.
Browse Prior Art Database

METAL DEPOSITED MASK FOR IMPROVED ALUMINUM LINE DEFINITION

IP.com Disclosure Number: IPCOM000005537D
Original Publication Date: 1984-Apr-01
Included in the Prior Art Database: 2001-Oct-12
Document File: 2 page(s) / 55K

Publishing Venue

Motorola

Related People

John S. McDonald: AUTHOR [+2]

Abstract

Two problems often encountered in the use of aluminum metallization on semiconductor devices are hillock formation and "notching" during aluminum etching. These problems are especially severe when the metallization includes very narrow runs. Both problems are reduced by the use of a TiW hard mask for aluminum patterning.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 2

ml MOTOROLA Technical Developments

Volume4 April 1984

METAL DEPOSITED MASK FOR IMPROVED ALUMINUM LINE DEFINITION

by John S. McDonald

James W. Rupnow

   Two problems often encountered in the use of aluminum metallization on semiconductor devices are hillock formation and "notching" during aluminum etching. These problems are especially severe when the metallization includes very narrow runs. Both problems are reduced by the use of a TiW hard mask for aluminum patterning.

   FIG. 1 illustrates a conventionally processed semiconductor wafer 10 having a layer 12 of oxide or other material on a portion of the wafer.surface. A layer of aluminum 14 to be patterned is evaporated or sputtered onto layer 12. TiW 16 is deposited on the aluminum layer and patterned using patterned photoresist 16.

Using the TiW as a hard mask, the aluminum is etched using wet chemical, plasma, reactive ion or other etching to give the structure illustrated in FIG. 2.

   After the aluminum is etched, the TiW and photoresist are removed and device processing is completed in the normal manner. Devices fabricated in this manner show less notching and less hillock formation than do devices processed with conventional aluminum patterning.

c) Motorola, Inc. 1964 34

[This page contains 14 pictures or other non-text objects]

Page 2 of 2

I'&) MOTOROLA Technical Developments Volume 4 April 1984

18 18 1

14

12

FIG. 1

18 18

12

FIG. 2

a Motorola, Inc. 1984 35

[This page contains 15 pictures or other non-text objects...