Browse Prior Art Database

SELF-ALIGNED MOAT-METAL DEPOSITION PROCESS

IP.com Disclosure Number: IPCOM000005716D
Original Publication Date: 1988-Oct-01
Included in the Prior Art Database: 2001-Oct-30
Document File: 1 page(s) / 75K

Publishing Venue

Motorola

Related People

Daniel Grupp: AUTHOR [+2]

Abstract

The process is a simple method for deposition of metal in an etched Si trench using lift-off (see attached Figure for the process flow). It takes advantage of the overhanging lip created from the silicon etch. The photoresist mask is structurally aided by a layer of oxide under the resist that help support the lip. Metal is then blanket deposited, with a subsequent lift-off of the surface metal and resist.

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MO7-OROLA Technical Developments Volume a October 1998

SELF-ALIGNED MOAT-METAL DEPOSITION PROCESS

by Daniel Grupp and Ruth Ruiz

   The process is a simple method for deposition of metal in an etched Si trench using lift-off (see attached Figure for the process flow). It takes advantage of the overhanging lip created from the silicon etch. The photoresist mask is structurally aided by a layer of oxide under the resist that help support the lip. Metal is then blanket deposited, with a subsequent lift-off of the surface metal and resist.

   This process is an improvement over non-self-aligned processes that use a photo layer in the trench to mask the metal for the etch. Such a process is also more costly due to the multiple photo layers necessary. Reworks are reduced in the new process because of the repeatability of the self-aligned deposition.

ALUMINUM DEPOSITION IN

MOATS

PHOTORESIST

OXIDE

SILICON

ALUMINUM

IJDEPOSIT MET

Z)ETCHPHOTORESIST INULTRA- SONICBATH TO LIFT OFF METAL.

4)ETCHALUMINUM.

5)STRIPPHOTORESIST.

\

0 Motorola. Inc. 1989 38

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