Browse Prior Art Database

AUTOMATED CREATION OF MASK DATA FOR INTERMEDIATE PLANARIZATION LAYERS

IP.com Disclosure Number: IPCOM000005921D
Original Publication Date: 1990-Mar-01
Included in the Prior Art Database: 2001-Nov-15
Document File: 2 page(s) / 81K

Publishing Venue

Motorola

Related People

Eric Herald: AUTHOR

Abstract

During processing of multi-layer structures, the wafer surface often becomes non-planar as shown by the FIG 1 cross-section where the first metal lines are represented by SO8 It is known that the wafer can be replanarized if photoresist is disposed in selected low areas of the dielectric isolation with a mask layer depicted as S08N herein. However, some digitizing applications require extremely long periods of time for hand creation of mask layers and therefore are not feasible. A technique for automatically generating the S06N mask from the SO8 mask data has been developed. The S08N mask data is digitized as non-hierarchial data because of the many design constraints that the mask data must follow.

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MOTOROLA Technical Developments Volume 10 March 1990

AUTOMATED CREATION OF MASK DATA FOR INTERMEDIATE PLANARIZATION LAYERS

by Eric Herald

   During processing of multi-layer structures, the wafer surface often becomes non-planar as shown by the FIG 1 cross-section where the first metal lines are represented by SO8 It is known that the wafer can be replanarized if photoresist is disposed in selected low areas of the dielectric isolation with a mask layer depicted as S08N herein. However, some digitizing applications require extremely long periods of time for hand creation of mask layers and therefore are not feasible. A technique for automatically generating the S06N mask from the SO8 mask data has been developed. The S08N mask data is digitized as non-hierarchial data because of the many design constraints that the mask data must follow.

   The FIG. 2 cross-section illustrates a silicon wafer with first metal (SO8) thereon. An interlayer dielectric is formed on the wafer surface including the first metal and localized areas of photoresist are formed on the interlayer dielectric. The labeled lines above the structure represent data for each of the computer operations. The data on layers SO6 and S08N are actually used to generate mask data while layers S08Tl and SO8T2 are temporary layers generated during Boolean operations.

The algorithm used to generate the S08N mask begins with an oversize of the SO8 mask by Land then a union of the data. L is defined as:

L = w, + Xl + x2

where W, equals the thickness of the interlayer dielectric, Xl equals the distance...