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RESONANT TUNNELING BIPOLAR TRANSISTOR (RBT) USING SI-GAP STRAINED QUANTUM WELLS IN SILICON

IP.com Disclosure Number: IPCOM000006043D
Original Publication Date: 1991-Apr-01
Included in the Prior Art Database: 2001-Nov-28
Document File: 2 page(s) / 84K

Publishing Venue

Motorola

Related People

Michael S. Lebby: AUTHOR

Abstract

There is a need to reduce circuit complexity and component count in silicon circuits that utilize compound semiconductors (in this case gallium phosphide i.e. GaP, and silicon ie Si). In addition, quantum electronic device design in silicon based semiconductors must be able to be cost effective with respect to tooling of a production line, and perform adequately at high frequencies. 2. SOLUTION This resonant tunneling bipolar transistor (RBT) combines present day growth technology with existent RBT devices in the III-V compound material system. The device is shown schematically in Figure 1 and features a nominally thin (-1OOA) GaP pseudomorphic but single crystal barrier layer inter- spaced with nominally thin (-1OOA) Si layers. The thin GaP and Si layers could be placed between the emitter and the base regions as shown in Figure 1, or alternatively, only in the emitter, or only in the base. The GaP/Si heterojunction interface will now form a conduction band barrier to electrons of -0.4eV In the valence band, the GaP/Si interface will form a heterojunction of -0.8eV. Other than the thin GaP and Si layers, the device is basically a silicon bipolar junction transistor with an emitter, base and collector. The device would work with two GaP layers surrounding a Si layer, but is not limited to two.

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MOTOROLA INC. Technical Developments Volume 12 April 1991

RESONANT TUNNELING BIPOLAR TRANSISTOR (RBT) USING SI-GAP STRAINED QUANTUM WELLS IN SILICON

by Michael S. Lebby


1. PROBLEM

   There is a need to reduce circuit complexity and component count in silicon circuits that utilize compound semiconductors (in this case gallium phosphide i.e. GaP, and silicon ie Si). In addition, quantum electronic device design in silicon based semiconductors must be able to be cost effective with respect to tooling of a production line, and perform

adequately at high frequencies.
2. SOLUTION

   This resonant tunneling bipolar transistor (RBT) combines present day growth technology with existent RBT devices in the III-V compound material system. The device is shown schematically in Figure 1 and features a nominally thin (-1OOA) GaP pseudomorphic but single crystal barrier layer inter- spaced with nominally thin (-1OOA) Si layers. The thin GaP and Si layers could be placed between the emitter and the base regions as shown in Figure 1, or alternatively, only in the emitter, or only in the base. The GaP/Si heterojunction interface will now form a conduction band barrier to electrons of -0.4eV In the valence band, the GaP/Si interface will form a heterojunction of -0.8eV. Other than the thin GaP and Si layers, the device is basically a silicon bipolar junction transistor with an emitter, base and collector. The device would work with two GaP layers surrounding a Si layer, but is not limited to two.

  When the RBT is biassed as shown in Figure 2, electrons will travel from the emitter and tunnel through the conduction band barriers, and exhibit

negative differential characteristics with respect to the collector curr...