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COPPER WIREBOND BARRIER METALLIZATION

IP.com Disclosure Number: IPCOM000006339D
Original Publication Date: 1991-Dec-01
Included in the Prior Art Database: 2001-Dec-26
Document File: 1 page(s) / 65K

Publishing Venue

Motorola

Related People

David J. Burkhard: AUTHOR

Abstract

A method for enhancing the performance of cop- subsequent interaction with the plastic mold compound per wirebonds on aluminum bond pads consists of using leading to device failure. Second, higher operating tem- a TiW or W barrier layer between the aluminum bond peratures without concern for lifetime limiting inter- pad and a copper fdm. The copper wire is bonded to this metallic formation. And third, longer device lifetimes copper film. This structure has three main advantages. overall with less susceptibility to contamination issues. First, elimination of Cu-Al intermetallic formation and A diagram of the structure is shown below: I I 0 Si m Oxide Al m Barrier (TiW) Sputtered Cu ~ %u wirebond 124 0 Motorola. 1°C. 1991

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MOTOROLA INC. Technical Developments Volume 14 December 1991

COPPER WIREBOND BARRIER METALLIZATION

by David J. Burkhard

  A method for enhancing the performance of cop- subsequent interaction with the plastic mold compound per wirebonds on aluminum bond pads consists of using leading to device failure. Second, higher operating tem- a TiW or W barrier layer between the aluminum bond peratures without concern for lifetime limiting inter-

pad and a copper fdm. The copper wire is bonded to this metallic formation. And third, longer device lifetimes copper film. This structure has three main advantages. overall with less susceptibility to contamination issues. First, elimination of Cu-Al intermetallic formation and A diagram of the structure is shown below:

I I

0 Si m Oxide

Al m Barrier (TiW)

Sputtered Cu ~ %u wirebond

124 0 Motorola. 1°C. 1991

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