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Browse Prior Art Database

ORGANIC SPACER TECHNOLOGY

IP.com Disclosure Number: IPCOM000006392D
Original Publication Date: 1992-May-01
Included in the Prior Art Database: 2001-Dec-31
Document File: 1 page(s) / 42K

Publishing Venue

Motorola

Related People

Jeff Pease: AUTHOR

Abstract

Sidewall spacer technology is well known in the semi- conductor art and typically employs inorganic confor- mal layers from which spacers are formed. Spacers are commonly used in lightly doped drain (LDD) and tine geometry applications. Although respectable selectivity may be obtained using common inorganic materials such as polysilicon, oxides and nitrides, the underlying semi- conductor tilms are often damaged and improvements in spacer technology are necessary.

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MOTOROLA INC. Technical Developments

May 1992

Yume l5

ORGANIC SPACER TECHNOLOGY~

by Jeff Pease

  Sidewall spacer technology is well known in the semi- conductor art and typically employs inorganic confor- mal layers from which spacers are formed. Spacers are commonly used in lightly doped drain (LDD) and tine geometry applications. Although respectable selectivity may be obtained using common inorganic materials such as polysilicon, oxides and nitrides, the underlying semi- conductor tilms are often damaged and improvements in spacer technology are necessary.

The recent abiity to form organic conformal layers

by PECVD and the lie allows organic materials that can be employed for use $I spacer technology. The use of organic spacers allows for virtually infmite selectivity between the spacers and kdely used inorganic materi- als. Further, in applications where spacers are ultimately removed, organic spacers may be readily "washed" from a semiconductor surface by utilizing an organic solvent. This does not damage the underlying inorganic semi- conductor material. Organic spacers, unlike inorganic spacers, may also be for&d on organic materials such as photoresist resulting in @nitkant advantages.

30 0 Motorola. Inc. ,992

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