Browse Prior Art Database

ETCHING AND DEPOSITING OF MATERIALS WITH A RF POWERED TIP

IP.com Disclosure Number: IPCOM000006497D
Original Publication Date: 1992-Aug-01
Included in the Prior Art Database: 2002-Jan-09
Document File: 2 page(s) / 105K

Publishing Venue

Motorola

Related People

Jenn-Hwa Huang: AUTHOR

Abstract

Plasma processing is well established as a means of etching and depositing dielectrics, semiconductors, met- als and polymers etc. In general, in these processes, the substrate under processing was exposed to a large vol- ume of plasma when we compare the size of the sub- strate to the size of the plasma. Hence, broad area processing is the focus of these applications. The focus of these applications, therefore, is uniformity etc. How- ever, chances arise, such as when in process diagnosis or process development, the abiity to alter localized stmc- tures of a substrate, say an integrated circuit, is very desirable for, for example, failure analysis purposes. Con- ventional plasma processing apparatus and technique are not applicable in this case. It is desirable to have a method with the capability of etching and depositing materials within selected localized areas. The method could also provide an integrated method of fabricating devices, such as transistors, diodes, capacitors etc., in a small designated area on a substrate. It will serve as a method of developing or repairing packages for devices and circuits, such as high density multi-level packages.

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MOTOROLA INC. Technical Developments Volume 16

August 1992

ETCHING AND DEPOSITING OF MATERIALS WITH A RF POWERED TIP

by Jenn-Hwa Huang

  Plasma processing is well established as a means of etching and depositing dielectrics, semiconductors, met- als and polymers etc. In general, in these processes, the substrate under processing was exposed to a large vol- ume of plasma when we compare the size of the sub- strate to the size of the plasma. Hence, broad area processing is the focus of these applications. The focus of these applications, therefore, is uniformity etc. How- ever, chances arise, such as when in process diagnosis or process development, the abiity to alter localized stmc- tures of a substrate, say an integrated circuit, is very desirable for, for example, failure analysis purposes. Con- ventional plasma processing apparatus and technique are not applicable in this case. It is desirable to have a method with the capability of etching and depositing materials within selected localized areas. The method could also provide an integrated method of fabricating devices, such as transistors, diodes, capacitors etc., in a small designated area on a substrate. It will serve as a method of developing or repairing packages for devices and circuits, such as high density multi-level packages.

  The objectives and advantages mentioned above may be achieved through the use of a novel plasma reaction set-up described below. In Figure 1, one can see that the apparatus consists of a RF power generation unit, an impedance matching network and a gas distribution sys- tem. All these units are commercially available. The RF generator usually is operated at 13.56 MHz. But this is not essential to the operation of the set-up described here.

  The major difference will be how the reaction spe- cies are delivered to the sample surface. Here a very small RF powered tip, in the dimension of few tenth of a micron to several hundred microns depending on the application, is designed to focus the reaction to a very specific localized area on a substrate. The tip will be very close to the area where the reaction occurs.

  There are two possible configurations for the tip as shown in Figure 2. If the diameter of the tip is large enough to allow a hollow passage to be made into it, then the reacti...