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A NEW DESIGN OF SINGLE WAFER DRY PLASMA ETCHERS WITH DEFECTIVITY REDUCTION CAPABILITY

IP.com Disclosure Number: IPCOM000006722D
Original Publication Date: 1992-Dec-01
Included in the Prior Art Database: 2002-Jan-25
Document File: 1 page(s) / 62K

Publishing Venue

Motorola

Related People

John McDonald: AUTHOR [+4]

Abstract

As the geometries of VLSI devices continue to shrink, not only do the etch processes become more challenging, but the contamination reduction/control issues become more critical. A typical etch process mod- ule will use several separate steps to form the pattern image as well as clean the various residues and particles from the wafer (megasonic cleans and veil removal processes). Numerous types of associated equipment (both wet and dry chemistry) are used for this purpose. These multiple process steps typically require extensive wafer handling, long cycle times, large floor space, and additional direct labor for operation.

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M-LA INC. Technical Developments Volume 17 December 1992

A NEW DESIGN OF SINGLE WAFER DRY PLASMA ETCHERS WITH DEFECTIVITY REDUCTION CAPABILITY

by John McDonald, Ping Wang, Doug Welter, and Robert Woodburn

  As the geometries of VLSI devices continue to shrink, not only do the etch processes become more challenging, but the contamination reduction/control issues become more critical. A typical etch process mod- ule will use several separate steps to form the pattern image as well as clean the various residues and particles from the wafer (megasonic cleans and veil removal processes). Numerous types of associated equipment (both wet and dry chemistry) are used for this purpose. These multiple process steps typically require extensive wafer handling, long cycle times, large floor space, and additional direct labor for operation.

  A new single wafer dry plasma etcher contiguration is demonstrated here (see the figure below). This new etcher configuration integrates not only the multiple iso- tropic and anisotropic plasma assemblies, but the defect reduction module (single wafer megasonic or chemical veil removal, etc.) as well. A single wafer is loaded into the entrance loadlock A. Then, the wafer goes through main plasma etch essembly B for isotropiclanisotropic etch. At&r the dry etch process, the water is transfered

to the photoresist strip chamber C for the photoresist removal on the top of the wafer. Finally, the wafer is transfered to the defectivity reduction cha...