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Method for producing ultra-thin wafers using bombardment with highly accelerated nanometer-scale particles

IP.com Disclosure Number: IPCOM000007687D
Publication Date: 2002-Apr-15
Document File: 5 page(s) / 127K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for an innovative technique to produce ultra-thin wafers using bombardment with highly accelerated nanometer-scale particles. Benefits include improved ease of manufacturing and improved reliability.

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Method for producing ultra-thin wafers using bombardment with highly accelerated nanometer-scale particles

Disclosed is a method for an innovative technique to produce ultra-thin wafers using bombardment with highly accelerated nanometer-scale particles. Benefits include improved ease of manufacturing and improved reliability.

Background

              Conventionally, back-grind methods create very-thin packages, such as stacked chip scale packages where wafers are reduced to 2-mils thick. To further decrease die thickness, novel methods must be developed.

Description

              The disclosed method produces ultra-thin wafers by using a high-vacuum cylindrical environment containing electromagnets directed along the long axis of the cylindrical chamber (see Fig. 1). A continuous stream of nanometer-scale particles containing an iron core is ejected on the other end of the cylindrical chamber (see Figure 2). The particles are accelerated to very high speeds by the electromagnetic fields. Particles strike the surface of the wafer and dig out pits on the wafer (see Figure 3). The accelerated particles and the dugout silicon (Si) leave the chamber through small exit slits located at the bottom of the wafer. The Si particulates and nanometer-scale particles are then sorted out by electromagnets placed on one end of a T-joint pipe to guide the particles into the chamber again.

              To obtain a uniform thinning, a uniform strong field covers the entire wafer. The design can be used in combination with convention...