Browse Prior Art Database

POLYGON BALL GRID ARRAY CHIP SCALE PACKAGE (PCSP)

IP.com Disclosure Number: IPCOM000007968D
Original Publication Date: 1997-Mar-01
Included in the Prior Art Database: 2002-May-09
Document File: 1 page(s) / 51K

Publishing Venue

Motorola

Related People

Paul Lin: AUTHOR [+2]

Abstract

Hexagonal shaped semiconductor die are known to increase wafer packing density (See, e.g., U.S. Patent #5,075,253). Conventional IC packages are square or rectangular with leads on the periph- ery. Using such conventional packages with hexag- onally shaped die defeats the packing density achieved by changing the shape of the die.

This text was extracted from a PDF file.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

m M-LA

V Technical Developments

POLYGON BALL GRID ARRAY CHIP SCALE PACKAGE (PCSP)

by Paul Lin and Mike McShane

hexagonal ball grid array (BGA) package to match the die shape has the advantage of achieving a chip scale package. The substrate of the BGA is formed in a hexagonal shape (Figure) to conform to the die shape. Shorter interconnect paths on the hexagonal substrate are beneficial for low inductance. The mechanical stress at molded comers and corner sol- der joints are also reduced or eliminated.

SOLUTION: This packaging concept is particularly applica- ble to flip chip array interconnect technology Array packaging technologies, without the because it matches silicon shape and only larger peripheral leads, can be designed in many shapes than the silicon as required by the next level inter- and can conform to the silicon die shape. Thus, a comiect technology routing capabilities.

PROBLEM:

Hexagonal shaped semiconductor die are known to increase wafer packing density (See, e.g.,
U.S. Patent #5,075,253). Conventional IC packages are square or rectangular with leads on the periph- ery. Using such conventional packages with hexag- onally shaped die defeats the packing density achieved by changing the shape of the die.

SEMICOiDUCTOR DIE

0 h4otom,a, 1°C. 1997 30 March 1997

[This page contains 15 pictures or other non-text objects]