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Method for the use of an implant marker layer for the damascene etch end detector

IP.com Disclosure Number: IPCOM000008162D
Publication Date: 2002-May-22
Document File: 3 page(s) / 43K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for the use of an implant marker layer for the damascene etch end detector. Benefits include improved throughput and defect reduction.

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Method for the use of an implant marker layer for the damascene etch end detector

Disclosed is a method for the use of an implant marker layer for the damascene etch end detector. Benefits include improved throughput and defect reduction.

Background

      Conventionally, SiN or SiC is used as the via stop layer (see Figure 1). Alternatively, a metal shunt serves as the via etch stop layer (see Figure 2).

Description

              The disclosed method uses an implant specie and etch-process end-point detector to detect a specified etch depth. The incorporation of an implant step improves the etch process for ILD layers.

              An implanted marker layer is used for via etch (see Figure 3). A metal shunt or a very thin layer of Si3N4 or SiC is used for a Cu diffusion barrier.

              When the implanted marker is detected during the via etch, an additional pre-determined etch time is used to complete the via etch process before hitting the Cu (see Figure 4, after Via etch, ash, and clean). A metal shunt or a very thin layer of Si3N4 or SiC can be used for a Cu diffusion barrier.

              During trench etch, a stop marker is implanted (see Figure 5).

              When the trench etch stop marker is detected during Trench etch, ash, and clean, the etch process can be halted (see Figure 6).

Advantages

              A via or trench depth in a damascene process can be targeted by the implant projected range.

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Disclosed anonymously