Browse Prior Art Database

DUAL-CHANNEL MOVABLE GATE FETs

IP.com Disclosure Number: IPCOM000008295D
Original Publication Date: 1997-Sep-01
Included in the Prior Art Database: 2002-Jun-04
Document File: 3 page(s) / 115K

Publishing Venue

Motorola

Related People

Lisa Zhang: AUTHOR [+3]

Abstract

In order to fit a large number of movable gates within a limited space, we have proposed the dual- channel design concept that a single channel is split into two by inserting an additional drain in the middle. In other words, a single gate would cover two channels as schematically illustrated in Figure 1. In sensor applications, the gate (Vg) and drain (Vd) are biased at the same potential. There is no electro- static attraction force between the gate and the underneath drain. For applications in a lateral GFET, the dual-channel design is shown schemati- cally in Figure 2, where the movable gate only covers part of the underlying active area. In a vertical GFET (z-axis), the dual-channel design can also be used in which the transducer size may be reduced.

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MOIOSKILA Technical Developments

DUAL-CHANNEL MOVABLE GATE FETs

by Lisa Zhang, Gary Li and Frank Shemansky

THE DUAL-CHANNEL CONCEPT

  In order to fit a large number of movable gates within a limited space, we have proposed the dual- channel design concept that a single channel is split into two by inserting an additional drain in the middle. In other words, a single gate would cover two channels as schematically illustrated in Figure 1. In sensor applications, the gate (Vg) and drain (Vd) are biased at the same potential. There is no electro- static attraction force between the gate and the underneath drain. For applications in a lateral GFET, the dual-channel design is shown schemati- cally in Figure 2, where the movable gate only covers part of the underlying active area. In a vertical GFET (z-axis), the dual-channel design can also be used in which the transducer size may be reduced.

  An additional advantage of the dual-channel design is that there is no longer misalignment between the gate and the drain. As shown in Figures 1 and 2, there must be an overlap between the gate and the two sources, in tbe longitudinal direction, to cover the possibility of mask mis-alignment. This is obviously not necessary for the drain. Therefore, the dual-channel design is partially self-aligned.

EXAMPLE OF A LATERAL GFET DESIGN

Using the dual-channel concept, a lateral GFET has been designed for acceleration up to 5Og (see

Figure 3 for the actual layout of the poiysilicon and the active layers; mask set: H61D), and it is currently fabricated in the ACT fa...