Browse Prior Art Database

NEW CVD ALUMINUM METALLIZATION SCHEME FOR ULSI INTERCONNECT

IP.com Disclosure Number: IPCOM000008543D
Original Publication Date: 1998-Mar-01
Included in the Prior Art Database: 2002-Jun-21
Document File: 2 page(s) / 132K

Publishing Venue

Motorola

Related People

T. P. Ong: AUTHOR [+3]

Abstract

The technique of inlaid metallization process has been actively pursued as an attractive replace- ment for the conventional metal deposition, patterning and etch process. The technology offers significant cost and cycle time reduction'-?. CVD Al is an excellent metallization materials because it offers excellent step coverage for high aspect ratio structures. Much work has been conducted on the nucleation of CVD Al on films such as TiN, TiNiTi, Cu etc, as well as the selective deposition of Al in vias or trenches'~! However, after much of detailed studies on very agressive dual inlaid structures, we found that 100% void-free metallized vias and trenches are not easily achievable on these nucleation layers. Unfortunately, Kelvin chain and via chain resistances are not sensitive to the presence of small voids.

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MOIVROLA Technical Developments

NEW CVD ALUMINUM METALLIZATION SCHEME FOR ULSI INTERCONNECT

by T. P. Ong, R. Fiordalice and J. Klein

  The technique of inlaid metallization process has been actively pursued as an attractive replace- ment for the conventional metal deposition, patterning and etch process. The technology offers significant cost and cycle time reduction'-?. CVD Al is an excellent metallization materials because it offers excellent step coverage for high aspect ratio structures. Much work has been conducted on the nucleation of CVD Al on films such as TiN, TiNiTi, Cu etc, as well as the selective deposition of Al in vias or trenches'~! However, after much of detailed studies on very agressive dual inlaid structures, we found that 100% void-free metallized vias and trenches are not easily achievable on these nucleation layers. Unfortunately, Kelvin chain and via chain resistances are not sensitive to the

presence of small voids.

  This report presents a new metallization approach proven to be manufacturable and cost effective: warm PVD AliCVD Al/coherent Al/coherent Ti (see Figure 1.) Use of the PVD Ti and PVD Al nucleation layer was proven to result in void-free deposition of the CVD Al layer (see Figure 2). The integration was successfully imple- mented into 0.4pm. Excellent electrical results have been obtained, culminating with an achievement of high device yields. Implementation of lCP/IMP or CVD techniques for the glue layer deposition is highly...