Browse Prior Art Database

Dual-layer Hybrid (Organic/Inorganic) Anti-Reflective Coating

IP.com Disclosure Number: IPCOM000008740D
Original Publication Date: 2002-Jul-08
Included in the Prior Art Database: 2002-Jul-08
Document File: 3 page(s) / 107K

Publishing Venue

Motorola

Related People

Robert J. Fox, III: INVENTOR

Abstract

Dual-layer anti-reflective coatings (ARCs) can provide much lower total reflectivity than any known single-layer ARC film, where the top layer functions in phase cancellation mode and the bottom layer in absorption mode. Further, the use of a hybrid dual-layer ARC, where the first layer deposited is inorganic in composition and the second layer organic, may be used to take advantage of an inherent etch/ash selectivity for films of different chemical composition. This inherent etch selectivity can be used to lower the total effective ARC thickness to be removed during subsequent RF sputter and CMP processing, thereby facilitating complete ARC removal. The use of a chemical vapor-deposited (CVD) organic layer may additionally serve to lessen total reflectivity in a dual-inlaid integration scheme, prevent negative interaction between exposed dielectric sidewall material and photoacid-catalyzed deep ultraviolet (DUV) photoresist, and potentially mitigate further etch/ash damage common to many low dielectric constant (low k) materials.

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Dual-layer Hybrid (Organic/Inorganic) Anti-Reflective Coating

Robert J. Fox, III

Abstract

Dual-layer anti-reflective coatings (ARCs) can provide much lower total reflectivity than any known single-layer ARC film, where the top layer functions in phase cancellation mode and the bottom layer in absorption mode.  Further, the use of a hybrid dual-layer ARC, where the first layer deposited is inorganic in composition and the second layer organic, may be used to take advantage of an inherent etch/ash selectivity for films of different chemical composition.  This inherent etch selectivity can be used to lower the total effective ARC thickness to be removed during subsequent RF sputter and CMP processing, thereby facilitating complete ARC removal.  The use of a chemical vapor-deposited (CVD) organic layer may additionally serve to lessen total reflectivity in a dual-inlaid integration scheme, prevent negative interaction between exposed dielectric sidewall material and photoacid-catalyzed deep ultraviolet (DUV) photoresist, and potentially mitigate further etch/ash damage common to many low dielectric constant (low k) materials.

Body

Current dual-layer inorganic ARC films can achieve very low (<1%) total reflectivity when used with single-layer DUV photoresists at l=248nm.  However, incomplete removal of such dual-layer inorganic ARC films may negatively impact UV transparency for non-volatile memory (NVM) products and line-to-line capacitance (and therefore total capacitance and RC delay) as each of these films have relatively high (>4) dielectric constants.

A dual-layer hybrid ARC, where the first layer deposited is inorganic in composition and the second layer is org...