Browse Prior Art Database

Method to incorporate low-k liquid dielectrics between metallic interconnects for insulating and cooling microelectronic devices

IP.com Disclosure Number: IPCOM000008794D
Publication Date: 2002-Jul-12
Document File: 4 page(s) / 112K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method to incorporate low dielectric-constant (k) liquid dielectrics between metallic interconnects for insulating and cooling microelectronic devices. Benefits include improved manufacturability and improved performance.

This text was extracted from a Microsoft Word document.
At least one non-text object (such as an image or picture) has been suppressed.
This is the abbreviated version, containing approximately 50% of the total text.

Method to incorporate low-k liquid dielectrics between metallic interconnects for insulating and cooling microelectronic devices

Disclosed is a method to incorporate low dielectric-constant (k) liquid dielectrics between metallic interconnects for insulating and cooling microelectronic devices. Benefits include improved manufacturability and improved performance.

Background

              Requirements exist to reduce parasitic crosstalk between interconnect lines and to dissipate heat from microelectronic devices. These requirements are becoming increasingly crucial for acceptable performance.

              Conventional solutions include low-k (k=2.5) solid dielectrics and out-of-chip cooling (see Figure 1).

              A proposed solution uses air as the dielectric medium. Although air can facilitate lower dielectric constants, a liquid improves mechanical strength to provide support to the interconnect superstructure. Another option uses liquid for cooling.

              Many organic liquids, such as long chain alkanes, have low dielectric constants and provide very good insulating media. Many of these liquids exist as solids at lower temperatures or in a chemically modified state, in which they can be patterned and etched using conventional lithographic processes. Polymers that may be used for patterning include polystyrene and other hydrophobic polymers.

              Dummification is the process by which redundant lines are introduced into the interconnect superstructure, in this case, to provide structural and mechanical support. The incorporation of dummification to support the interconnect superstructure is not the focus of the disclosed method.

General description

      The disclosed method integrates liquid dielectrics into the interconnect structure (backend) of microelectronic devices. They include semiconductor chips and optoelectronic and radio-frequency (RF) micro electro-mechanical systems (MEMS) devic...