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A NEW FABRICATION METHOD OF MAKING TETRODE FIELD EMISSION DISPLAY

IP.com Disclosure Number: IPCOM000008825D
Original Publication Date: 1998-Sep-01
Included in the Prior Art Database: 2002-Jul-17
Document File: 2 page(s) / 91K

Publishing Venue

Motorola

Related People

Chenggang Xie: AUTHOR

Abstract

Field emitter arrays are extensively studied for electron sources in vacuum microelectronic devices and flat panel display. In convention triode field emis- sion display, the electrons are extracted from the sharp tip by the gate electrode biased at a few ten volts high- er relative to the tips. Accelerated under the anode electric field, the electrons bombard the phosphor material on the anode and the phosphor emits light. The problem with this triode structure is the electron beam size is large for high-resolution display applica- tions. To obtain tine electron beam, the tetrode struc- ture is created. The additional electrode is used to focus the electron beam.

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Technical Developments

A NEW FABRICATION METHOD OF MAKING TETRODE FIELD EMISSION DISPLAY

by Chenggang Xie

  Field emitter arrays are extensively studied for electron sources in vacuum microelectronic devices and flat panel display. In convention triode field emis- sion display, the electrons are extracted from the sharp tip by the gate electrode biased at a few ten volts high- er relative to the tips. Accelerated under the anode electric field, the electrons bombard the phosphor material on the anode and the phosphor emits light. The problem with this triode structure is the electron beam size is large for high-resolution display applica- tions. To obtain tine electron beam, the tetrode struc- ture is created. The additional electrode is used to focus the electron beam.

  In this work, we introduce a new fabrication method of making tetrode field emission display. This method also eliminates the liftoff process, comparing to traditional Spindt tips fabrication process.

  The fabrication sequence of tetrode device is illus- trated in Figure 1. A layer of 0.2 (m thick Molybdenum was deposited on the glass and was patterned. Then 1

(m Si02 layer and 0.2 (m Molybdenum layer were deposited over the first Molybdenum layer (see Figure la) using sputtering techniques. The second Molybdenum layer was patterned. A second Si02 layer was deposited. The emitter wells were patterned, developed and etched using RIE, illustrated in Figure Ic. The next step is the Spindt tip...