Browse Prior Art Database

INTEGRATED SILICON CARBIDE UV DETECTOR

IP.com Disclosure Number: IPCOM000009031D
Original Publication Date: 1999-Jan-01
Included in the Prior Art Database: 2002-Aug-02
Document File: 2 page(s) / 118K

Publishing Venue

Motorola

Related People

Karen Moore: AUTHOR [+5]

Abstract

Silicon carbide is an ideal material from which to fabricate UV detectors because of its high absorp- tion at UV wavelengths (Figure 1). In fact, UV detectors from SIC are commercially available. However SIC technology is very immature com- pared to Si technology as is evidenced by the very small wafer size presently available, 2 inch diame- ter. This small wafer size severely limits Sic's potential for high volume manufacturing. In addi- tion, it would be desirable to incorporate analysis circuitry to the UV detector, but the present level of development of CMOS circuits from SIC is not ade- quate to perform such analytical functions. The combination of a SIC UV detector with Si CMOS circuitry on a bulk Si wafer would overcome the above mentioned limitations.

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0 M MO-LA

Technical Developments

INTEGRATED SILICON CARBIDE UV DETECTOR

by Karen Moore, Charles Weitzel, Mohit Bhatnagar, Tom Wetteroth and Syd Wilson

BACKGROUND

  Silicon carbide is an ideal material from which to fabricate UV detectors because of its high absorp- tion at UV wavelengths (Figure 1). In fact, UV detectors from SIC are commercially available. However SIC technology is very immature com- pared to Si technology as is evidenced by the very small wafer size presently available, 2 inch diame- ter. This small wafer size severely limits Sic's potential for high volume manufacturing. In addi- tion, it would be desirable to incorporate analysis circuitry to the UV detector, but the present level of development of CMOS circuits from SIC is not ade- quate to perform such analytical functions. The combination of a SIC UV detector with Si CMOS circuitry on a bulk Si wafer would overcome the above mentioned limitations.

DESCRIPTION

  The benefits of both technologies are achieved by combining Sic and Si electronic devices on the same bulk silicon substrate. This is accomplished by either growing Sic directly on the Si substrate or by wafer bonding a thin layer of Sic to the Si sub- strate. The Sic layer is then patterned into areas where the UV detectors will be located in the inte- grated circuit. The silicon areas which contain the other control circuitry can be formed in an epitaxial Si layer grown on the bulk substrate or can be for- med directly in the bulk Si substrate using ion implantation. If wafer bonding is used, the SIC can be pre-patterned before it is transferred to the Si wafer.

  Once the combined material structure of Si and Sic is in place, the entire wafer can than be processed in a manner similar to bulk Si fabrication except the steps of forming electronic devices in the

Sic areas will have to follow generally accepted Sic fabrication procedures. In this manner MOS transis- tors can be formed and intercon...