Browse Prior Art Database

DEVICE FOR INTRINSIC STRESS MEASUPEMENT

IP.com Disclosure Number: IPCOM000009034D
Original Publication Date: 1999-Jan-01
Included in the Prior Art Database: 2002-Aug-02
Document File: 2 page(s) / 76K

Publishing Venue

Motorola

Related People

Yifan Guo: AUTHOR [+6]

Abstract

This device can be used to determine the intrin- sic stresses induced in wafer processes such as met- alization and bumping. The sensing device uses an etched silicon structure with a specified membrane thickness. The sensing device is put into the processes which are under investigation or being monitored. The process induced stresses will cause Si membrane deformation. The stresses can be determined by measuring the deformation of the membrane.

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MOTOROLA Technical Developments

DEVICE FOR INTRINSIC STRESS MEASUPEMENT

by Wan Guo, Dawei Zheng, Vijay Sarihan, Jong-Kai Lin, William Lytle and Kenneth Goldman

ABSTRACT

  This device can be used to determine the intrin- sic stresses induced in wafer processes such as met- alization and bumping. The sensing device uses an etched silicon structure with a specified membrane thickness. The sensing device is put into the processes which are under investigation or being monitored. The process induced stresses will cause Si membrane deformation. The stresses can be determined by measuring the deformation of the membrane.

PROBLEM

  For quality control and reliability analysis in semiconductor product development, it is important to determine the residual stresses in the devices and interconnects from wafer processes such as thin film deposition, plating, patterning, etching and heat treatment. The localized stress built up in the devices, which is closely related to the wafer processes, is one of the major causes of low process yield and early failures in semiconductor products.

  Currently, there are no effective tools that can characterize and monitor the local residual stress induced by wafer processes. Average residual stress- es in thin films on a wafer are measured indirectly

by the FLEXUS machine. This method is not capa- ble of determining the residual stresses at a local area such as the bond pads and UBM (under bump metallurgy) with different geometry.

SOLUTION

  The p...