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Implant Enhanced Silicon Dioxide Seal Trench Isolation

IP.com Disclosure Number: IPCOM000009457D
Publication Date: 2002-Aug-26
Document File: 3 page(s) / 73K

Publishing Venue

The IP.com Prior Art Database

Abstract

A new technique using implant enhanced silicon dioxide to form a trench isolation structure having low cost, low stress, and minimal processing steps is presented as an alternative to other component isolation schemes used in integrated circuit manufacturing.

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Implant Enhanced Silicon Dioxide Seal Trench Isolation 

A new technique using implant enhanced silicon dioxide to form a trench isolation structure having low cost, low stress, and minimal processing steps is presented as an alternative to other component isolation schemes used in integrated circuit manufacturing.

   Trench isolation structures are commonly used to provide electrical isolation and reduce coupling between adjacent components on a semiconductor substrate.  A new method and structure is presented having the advantages of:

·        Scaleable for applications where Epi or substrate layer thickness vary.

·        Reduced coupling of adjacent circuits due to inherent low dielectric constant (less than 1 ‘k’).

·        Scalability not limited by circuit separation or stress.

Key Words

Implant Enhancement

Scalable Air Gap

Trench Isolation formation.

 

Process:

1.   Grow or deposit approximately 500 angstroms of oxide on the substrate.

2.   Deposit approximately 1500 angstroms of silicon nitride on the substrate.

3.   Implant the substrate using oxygen species at an energy of 2e16 and 180kev.

4.   Photomask the nitride to act as a trench hardmask

5.   Etch trenches in substrate.

6.   Remove nitride hardmask.

7.   Anneal and or reoxidize silicon to seal trenches of at the surface.

Thus producing an isolation structure comprising a void produced in a substrate, wherein the void is made by reoxidizing or annealing an oxygen enhanced region of the substrate to form a cap over the void...