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Method for high-k thin film with a barrier layer

IP.com Disclosure Number: IPCOM000010175D
Publication Date: 2002-Oct-30
Document File: 2 page(s) / 35K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for high dielectric constant (k) thin film with a barrier layer. Benefits include improved reliability.

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Method for high-k thin film with a barrier layer

Disclosed is a method for high dielectric constant (k) thin film with a barrier layer. Benefits include improved reliability.

Background

� � � � � Ceramic chip capacitor manufacturers dope the outer surface of the ceramic powders before forming and sintering the unfinished product. Doping the powder surfaces cannot be used in films because powder processing is not used in thin film deposition. In literature, donor-doping the whole film is mentioned. However, donor dopants lower the Curie temperature of ferroelectric-based films. Most films in literature are not doped against leakage.

        � � � � � Oxygen vacancies exist in metal oxide-based high-k thin films as a consequence of the first and second laws of thermodynamics.

        � � � � � During the operation of the capacitor, oxygen vacancies migrate towards the cathode under the effect of the DC bias. The cathode (metallic electrode) is impervious to ions. As a result, the positively charged oxygen vacancies gradually pile up. Due to local charge neutrality, the vacancies are compensated by electrons that are self-generated by solid-state reactions. The Fermi levels of the adjacent dielectric and metal films equalize, leading to electron emission from the electrode into the dielectric. A similar process occurs at the anode as a result of the interplay between the deficiency of oxygen vacancies and the compensating holes.

General description

� � � � � The disclosed method adds donor-dop...