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Method for an ESD-Protected RF/Microwave Low Noise Amplifier

IP.com Disclosure Number: IPCOM000010721D
Publication Date: 2003-Jan-15
Document File: 2 page(s) / 875K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method that integrates an ESD protection network into the design of low noise amplifiers (LNAs). Benefits include improved low noise performance.

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Method for an ESD-Protected RF/Microwave Low Noise Amplifier

Disclosed is a method that integrates an ESD protection network into the design of low noise amplifiers (LNAs). Benefits include improved low noise performance.

Background

Currently, RF/Microwave LNAs are integrated with high performance CMOS digital circuits on the same die. This integration requires ESD testing for manufacturability; therefore, ESD protection is commonly added to originally non-ESD-protected circuits as an extra circuitry.

General Description

The disclosed method is a protection network that is seamlessly incorporated into its matching network. The ESD circuitry is a reverse-biased diode network connected by a single resistor. On a fully differential LNA, the ESD network is duplicated and present in each one of the RF inputs. The LNA’s diodes produce capacitances, which in association with the inductance between the diodes, create an amplifier input impedance of 50 ohms. Since the integrated inductor has a low quality factor (low Q), this inductor provides the required resistance for the 2kV ESD network. Figure 1 shows the layout of a fully differential 2.4GHz LNA with 2kV (human body level) ESD protection incorporated into its input matching network.

The 2kV ESD-Protected LNA design takes into account diode sizes and resistor values for ESD protection. The LNA searches the load impedance that corresponds to a source reflection coefficient, which relates to the values of inductance and capacita...