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Method for attaching CNTs to silicon

IP.com Disclosure Number: IPCOM000011849D
Publication Date: 2003-Mar-19
Document File: 3 page(s) / 496K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for attaching carbon nanotubes (CNTs) to silicon. Benefits include improved thermal performance, improved performance, and improved functionality.

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Method for attaching CNTs to silicon

Disclosed is a method for attaching carbon nanotubes (CNTs) to silicon. Benefits include improved thermal performance, improved performance, and improved functionality.

Background

� � � � � A process is required for attaching high thermal conductivity CNTs to silicon wafers after manufacturing without adding contact resistance. Conventionally, contact resistance mitigates the thermal dissipating advantage of using CNTs.

� � � � � Theoretically, CNTs are estimated to be several times more thermally conductive than diamond, which is the highest thermally conductive material that is synthesized. Measurements of multiwall carbon nanotubes yield values in excess of 2000 W/m-K.

� � � � � No conventional method exists for attaching CNT to silicon after manufacturing. CNT attachment is done by gluing or bonding a substrate with the CNT already attached to the silicon wafer. With the conventional solution, two contact resistances, R1 and R2, are added to the thermal resistance due to the adhesive material (see Figure 1).

Description

� � � � � The disclosed method is attaching carbon nanotubes to silicon wafers. The disclosed method leverages the high thermal conductivity property of CNTs to aid in dissipating heat from the processor. The disclosed method utilizes existing fab processes to grow CNTs on the backside of processed wafers. This technique eliminates the contact resistance between the nanotubes and the wafer and the additional bonding process required to attach the wafer to a substrate with carbon nanotubes attached.

        � � � � � The key elements of the method include...