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Perforated” Wafer for Improved Die Singulation

IP.com Disclosure Number: IPCOM000011939D
Publication Date: 2003-Mar-26
Document File: 2 page(s) / 42K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method that etches holes through the entire silicon (Si) wafer at the final stage of processing. Benefits include reducing stress generated during the sawing process.

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Perforated” Wafer for Improved Die Singulation

Disclosed is a method that etches holes through the entire silicon (Si) wafer at the final stage of processing. Benefits include reducing stress generated during the sawing process.

Background

Currently, there are many concerns about the amount of stress generated on the die, especially with very thin Si (background down to 3 mils or less) or very brittle Si (low-K dielectric). One of the key areas of concern is during the saw process. The saw process is either optimized using a blade (speed, width, etc.), or an additional step is added with a laser scribe (see Figure 1).

General Description

The disclosed method helps reduce the amount of stress that the saw process generates (see Figures 2 through 4). At one of the final stages in the fabrication process, an etch resistant material is placed onto the wafer (i.e. on both the front and back to improve process time), then the entire wafer is etched through. The pattern should be chosen based on either key areas of stress relief (i.e. corners) or the singulation process (i.e. many holes created if planning to “break” off die).

In another implementation, the saw process is very similar to the current state of the art. However, as the saw blade passes through the holes etched in the wafers, stress would be much lower on the die edges.

Advantages

The disclosed method improves the etch process by not generating any additional stress on the edges of the Si. However, it will still ...