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Method for the use of a HDP multi-layer (PSG/USG) film stack for ILD0 application

IP.com Disclosure Number: IPCOM000012356D
Publication Date: 2003-Apr-30
Document File: 3 page(s) / 118K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for the use of a high-density plasma (HDP) multi-layer phosphosilicate glass/undoped silicate glass (PSG/USG) film stack for interlayer dielectric base layer (ILD0) application. Benefits include improved production yields and improved ease of manufacturing.

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Method for the use of a HDP multi-layer (PSG/USG) film stack for ILD0 application

Disclosed is a method for the use of a high-density plasma (HDP) multi-layer phosphosilicate glass/undoped silicate glass (PSG/USG) film stack for interlayer dielectric base layer (ILD0) application. Benefits include improved production yields and improved ease of manufacturing.

Background

              Phosphorous bubbles can be detected by defect metrology equipment. Conventionally, recipes are desensitized due to the defects seen post-deposition. Smaller-sized defects can go undetected, which can lower manufacturing yields and affect product reliability.

              Phosphene (PH3) gas is expensive.

              Microscratching can occur at the post-ILD0 polish processing step, decreasing manufacturing yields.

              Conventionally, only an HDP-PSG film is used, which uses phosphene gas and has resulted in bubble and microscratching problems.

General description

              The disclosed method is the use of a HDP multilayer PSG/USG film stack for ILD0 application. The process is a two-step deposition. A PSG film and a USG film are deposited to complete the interlayer dielectric (ILD) base layer.

              The key elements of the method include:

•             PSG film that provides a conventional gettering capability

•             USG film

              -             Stable post-planar oxide thickness (no inherent polish rate dependence on %P)

              -             Improved polish uniformity due to no %P range issues

              -             No phosphorous bubbles that are detected by metrology due to moisture/ambient effects

              -             Harder film that could provide fewer microscratching effects detected post-planar

Advantages

              The disclosed method provides advantages, including:

•             Improved production yields due to eliminating t...