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Method for the use of a HDP multi-layer (PSG/USG) film stack for ILD0 application

IP.com Disclosure Number: IPCOM000012356D
Publication Date: 2003-Apr-30
Document File: 3 page(s) / 124K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for the use of a high-density plasma (HDP) multi-layer phosphosilicate glass/undoped silicate glass (PSG/USG) film stack for interlayer dielectric base layer (ILD0) application. Benefits include improved production yields and improved ease of manufacturing.

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Method for the use of a HDP multi-layer (PSG/USG) film stack for ILD0 application

Disclosed is a method for the use of a high-density plasma (HDP) multi-layer phosphosilicate glass/undoped silicate glass (PSG/USG) film stack for interlayer dielectric base layer (ILD0) application. Benefits include improved production yields and improved ease of manufacturing.

Background

        � � � � � Phosphorous bubbles can be detected by defect metrology equipment. Conventionally, recipes are desensitized due to the defects seen post-deposition. Smaller-sized defects can go undetected, which can lower manufacturing yields and affect product reliability.

        � � � � � Phosphene (PH3) gas is expensive.

        � � � � � Microscratching can occur at the post-ILD0 polish processing step, decreasing manufacturing yields.

        � � � � � Conventionally, only an HDP-PSG film is used, which uses phosphene gas and has resulted in bubble and microscratching problems.

General description

        � � � � � The disclosed method is the use of a HDP multilayer PSG/USG film stack for ILD0 application. The process is a two-step deposition. A PSG film and a USG film are deposited to complete the interlayer dielectric (ILD) base layer.

        � � � � � The key elements of the method include:

•        � � � � PSG film that provides a conventional gettering capability

•        � � � � USG film

        � � � � � -        � � � � Stable post-planar oxide thickness (no inherent polish rate dependence on %P)

        � � � � � -        � � � � Improved polish uniformity due to no %P range issues

        � � � � � -        � � � � No phosphorous bubbles that are detected by metrology due to moisture/ambient effects

        � � � � � -        � � � � Harder film that could provide fewer microscratching effects detected post-planar

Advantages

        � � � � � The disclosed method provides advantages, including:

•        � � � � Improved production yields due to eliminating t...