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Method for multiple-layer H2- or He-gap interconnects for thermal enhancement

IP.com Disclosure Number: IPCOM000012714D
Publication Date: 2003-May-21
Document File: 3 page(s) / 96K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for multiple-layer H2- or He-gap interconnects for thermal enhancement. Benefits include improved support for future technology, improved thermal performance, and improved performance.

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Method for multiple-layer H2- or He-gap interconnects for thermal enhancement

Disclosed is a method for multiple-layer H2- or He-gap interconnects for thermal enhancement. Benefits include improved support for future technology, improved thermal performance, and improved performance.

Background

              The conventional method is to combine flip chips with  Carbon Doped Oxide (CDO) as interconnect layers (see Figure 1). However, increases in the interconnect signal delay (RC delay) limits the ultimate processing speed of microprocessors.

              Future Si technology requires a low dielectric constant, K, of less than 2.0 to reach line-to-line capacitance goals (see Figure 2). One conventional solution is to use air as a dielectric (see Figure 3). However, the thermal conductivity of air is only 0.0313 W/m-K at 200 °F (93.3 °C), which is about one order of magnitude smaller than CDO thermal conductivity (~ 0.3 W/m-K). Heating caused by high current is difficult to dissipate because of the low thermal conductivity of air.

General background

              The disclosed method is a package technology that is implemented using H2 or He as low-K interconnects. The Si manufacturing process is the same as with an air interconnect. The H2 or He is introduced during the package assembly process.

              The key elements of the method include:

•             Flip chips with air interconnects

•             H2 or H2 chambers

•             Under fill

Advantages

              The disclosed method provides advantages, including:

•             Improved suppo...