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Method for multiple-layer H2- or He-gap interconnects for thermal enhancement

IP.com Disclosure Number: IPCOM000012714D
Publication Date: 2003-May-21
Document File: 3 page(s) / 87K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for multiple-layer H2- or He-gap interconnects for thermal enhancement. Benefits include improved support for future technology, improved thermal performance, and improved performance.

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Method for multiple-layer H2- or He-gap interconnects for thermal enhancement

Disclosed is a method for multiple-layer H2- or He-gap interconnects for thermal enhancement. Benefits include improved support for future technology, improved thermal performance, and improved performance.

Background

        � � � � � The conventional method is to combine flip chips with� Carbon Doped Oxide (CDO) as interconnect layers (see Figure 1). However, increases in the interconnect signal delay (RC delay) limits the ultimate processing speed of microprocessors.

        � � � � � Future Si technology requires a low dielectric constant, K, of less than 2.0 to reach line-to-line capacitance goals (see Figure 2). One conventional solution is to use air as a dielectric (see Figure 3). However, the thermal conductivity of air is only 0.0313 W/m-K at 200 °F (93.3 °C), which is about one order of magnitude smaller than CDO thermal conductivity (~ 0.3 W/m-K). Heating caused by high current is difficult to dissipate because of the low thermal conductivity of air.

General background

        � � � � � The disclosed method is a package technology that is implemented using H2 or He as low-K interconnects. The Si manufacturing process is the same as with an air interconnect. The H2 or He is introduced during the package assembly process.

        � � � � � The key elements of the method include:

•        � � � � Flip chips with air interconnects

•        � � � � H2 or H2 chambers

•        � � � � Under fill

Advantages

        � � � � � The disclosed method provides advantages, including:

•        � � � � Improved suppo...