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Method for dynamic MOS device sidewall spacer physical dimension targeting based on gate conductor physical and/or electrical dimensions

IP.com Disclosure Number: IPCOM000012784D
Publication Date: 2003-May-28
Document File: 2 page(s) / 66K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for dynamic metal oxide semiconductor (MOS) device sidewall spacer physical dimension targeting based on gate conductor physical and/or electrical dimensions. Benefits include improved functionality and improved performance.

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Method for dynamic MOS device sidewall spacer physical dimension targeting based on gate conductor physical and/or electrical dimensions

Disclosed is a method for dynamic metal oxide semiconductor (MOS) device sidewall spacer physical dimension targeting based on gate conductor physical and/or electrical dimensions. Benefits include improved functionality and improved performance.

Description

              The disclosed method modifies the final physical dimensions of the sidewall spacers used for MOS device fabrication (see Figure 1). The method optimizes the overall device performance based on the changes in the gate conductor physical dimensions. This optimization enables dynamic inline device optimization to reduce the overall variability of device performance.

              Gate conductor physical dimensions are driven as low as possible without adversely impacting device leakage current levels. Natural process variation with aggressive targeting can result in device failures unless spacer physical dimensions can be adjusted to compensate, which is accomplished using the disclosed method.

              The disclosed method enables more aggressive gate conductor physical dimension targeting without sacrificing die yield due to leakage issues. The disclosed method presents a very significant cost improvement to any processor manufacturer that has aggressive device performance goals for a product line.

              Any material used for the sidewall spacer can be used for the disclosed m...