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Method for a 300mm bare-silicon particle test wafer regeneration process

IP.com Disclosure Number: IPCOM000012943D
Publication Date: 2003-Jun-11
Document File: 5 page(s) / 122K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for a bare-silicon particle test wafer regeneration process. Benefits include improved functionality, an improved test environment, and improved cost effectiveness.

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Method for a 300mm bare-silicon particle test wafer regeneration process

Disclosed is a method for a bare-silicon particle test wafer regeneration process. Benefits include improved functionality, an improved test environment, and improved cost effectiveness.

General description

              The disclosed method is a bare silicon particle test wafer regeneration process. A dirty dry

stripped-to-bare-silicon wafer is delivered to the processing equipment. The wafer is loaded onto the polish table, then cleaned at a chemical cleaning station and dried at a spin/rinse dry station. The wafer is removed from the tool and loaded on a defect inspection tool.

Advantages

              The disclosed method provides advantages, including:

•             Improved functionality due to regenerating particle test wafers for reuse

•             Improved test environment due to particle test wafer regeneration

•             Improved cost effectiveness due to extending the useful life of particle test wafers to near unlimited life.

·        Improved lot to lot defect distribution allows elimination of some pre metrology steps

Detailed description

              The disclosed method regenerates test wafers by polishing and chemically cleaning used wafers (see Figure 1).

              Process consumables include the following items:

•             Wafer backing film

•             Rolled embossed polytex polish pad
•             Slurry diluted 20:1 to water

•             Sponges

·        Low concentration cleaning chemistry

              The wafer is processed on the polish table then transferred to cleaning station 1 where sponges and cleaning chemistry are used for cleaning. At cleaning station 2, the wafer is rinsed and spun dry. The wafer is then removed from the tool.

              The wafer is loaded into the polish unit of the tool for polishing (see Figure 2). After the wafer is finished polishing, it is rinsed for 13 seconds.

              Cleaning chemistry is delivered at approximately 0.7 liters/min. on the top (device) side of the wafer and approximately 0.4 liters/min. on the bottom (back) side of the wafer (see Figure 3). The chemical clean lasts 40 seconds. The water rinse is for 15 seconds.

              The wafer is rinsed with DI water for 5 seconds, then dried for 45 seconds (see Figure 4).

              Bulk delivered cleaning chemistry is comprised of 20 parts H20,  2 parts KOH, and 1 part H2O2. The chemicals are mixed in the chemical delivery room and piped above the tool level in a gas-separation box (see Figure 5). The chemicals run under the tool, are split to each side, and run into the internal chemical distribution box (see Figure 6). The internal chemical distribution box features include:

•             Chemical supply...