Browse Prior Art Database

Deep Silicon Via Fill

IP.com Disclosure Number: IPCOM000012946D
Publication Date: 2003-Jun-11
Document File: 1 page(s) / 59K

Publishing Venue

The IP.com Prior Art Database

Abstract

Disclosed is a method for filling high aspect ratio silicon vias by vibrating metal beads into the via openings then re-flowing the metal. Benefits include eliminating process steps and increasing through put.

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Deep Silicon Via Fill

Disclosed is a method for filling high aspect ratio silicon vias by vibrating metal beads into the via openings then re-flowing the metal. Benefits include eliminating process steps and increasing through put.

Background

Currently, filling the vias is accomplished by sputtering a seed layer of metals (usually two or more types of metals), then electroplating to fill the vias and using a polishing step to remove excess metals.

General Description

In the disclosed method, the wafer is placed on a vibrating surface. Metal balls are dispensed across the wafer, allowing them to drop into the via openings. Sufficient time and quantity of balls ensures that all vias are filled. The wafer is then transferred to a hot plate where it is heated to a temperature sufficient to melt the metal to fill the via hole (see Figure 1).

Advantages

The disclosed method achieves a higher wafer through put by eliminating processing steps. Production costs are also lowered by eliminating expensive process steps and equipment (i.e. sputter and plating equipment are very expensive).

Metal ball

 
Fig. 1

       
   

Via in Wafer

 
 

Silicon Wafer

 
 
 

Disclosed anonymously