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Pinning Structure for the GMR Sensor

IP.com Disclosure Number: IPCOM000013374D
Original Publication Date: 2001-Mar-01
Included in the Prior Art Database: 2003-Jun-18
Document File: 1 page(s) / 36K

Publishing Venue

IBM

Abstract

We disclose a new pinning structure for the GMR sensor. A coercivity ferromagnet is antiparallel coupled to the pinned layer. The magnetization of the high coercivity layer is kept low to avoid any magnetic bias effect on the free layer. The antiparallel coupling of the high coercivity ferromagnet with the pinned layer also helps to maintain low bias on the free layer.

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Pinning Structure for the GMR Sensor

   We disclose a new pinning structure for the GMR sensor. A coercivity ferromagnet is antiparallel coupled to the pinned layer. The magnetization of the high coercivity layer is kept low to avoid any magnetic bias effect on the free layer. The antiparallel coupling of the high coercivity ferromagnet with the pinned layer also helps to maintain low bias on the free layer.

One application of this pinning structure is demonstrated with the following design:

        Free layer/Cu spacer/Pinned layer/Ru/high Hc layer/Ru/Pinned layer/Free layer The center high Hc layer provides pinning to both pinned layers. It is antiparallel coupled with the pinned layers to achieve stronger pinning and low net bias on the free layer.

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