Browse Prior Art Database

Pulse Current Supply to Wafer to Minimize Effect of Gas Generation and Resist Lifting During Electroplating

IP.com Disclosure Number: IPCOM000013792D
Original Publication Date: 1999-Oct-01
Included in the Prior Art Database: 2003-Jun-18
Document File: 1 page(s) / 35K

Publishing Venue

IBM

Related People

Andrew Chiu: AUTHOR [+4]

Abstract

A by-product of electroplating certain metals on to silicon or ceramic wafers is gas generation which causes resist lifting or undesired voids in the plated film.

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

  Pulse Current Supply to Wafer to Minimize Effect of Gas Generation and Resist Lifting During Electroplating

   A by-product of electroplating certain metals on to silicon or ceramic wafers is gas generation which causes resist lifting or undesired voids in the plated film.

   This disclosure proposes the use of pulse plating, where current to the wafer is turned on and off at intermittent time intervals during the electroplating process to allow gas bubbles to flow away from the active plating area.

1