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Browse Prior Art Database

GMR Head Asymmetry Control by Pinned Layer Thickness

IP.com Disclosure Number: IPCOM000013874D
Original Publication Date: 1999-Dec-01
Included in the Prior Art Database: 2003-Jun-18
Document File: 1 page(s) / 39K

Publishing Venue

IBM

Related People

Harry Gill: AUTHOR [+2]

Abstract

The fraction of sense current flowing in the AP-pinned portion of the sensor has important influence on the FREE layer biasing of the AP-pinned type GMR heads. The amount of shunt current flowing in the pinned layer can be adjusted by selecting pinned layer thickness to optimize biasing and the read signal of the head. Our observations show that for the following sensor design 4 A pinned layer thickness change of each pinned layer changes read signal asymmetry by about 7%. AP-pinned sensor design is of following type: Sensor layers at the air bearing surface: Shield 1/Al2O3/NiO/NiFe/CoFe/Ru/CoFe/Cu/CoFe/NiFe/Ta/Al2O3/Shield 2 CoFe layers around "Ru" spacer are AP-pinned. The thicknesses of "CoFe" around "Ru" spacer are equal and changed together to keep the magnetic thickness of the pinned layer fixed while changing the sense current fraction shunted through the pinned layer. 1

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GMR Head Asymmetry Control by Pinned Layer Thickness

   The fraction of sense current flowing in the AP-pinned portion of the sensor has important influence on the FREE layer biasing of the AP-pinned type GMR heads. The amount of shunt current flowing in the pinned layer can be adjusted by selecting pinned layer thickness to optimize biasing and the read signal of the head. Our observations show that for the following sensor design 4 A pinned layer thickness change of each pinned layer changes read signal asymmetry by about 7%.

   AP-pinned sensor design is of following type: Sensor layers at the air bearing surface: Shield 1/Al2O3/NiO/NiFe/CoFe/Ru/CoFe/Cu/CoFe/NiFe/Ta/Al2O3/Shield 2 CoFe layers around "Ru" spacer are AP-pinned. The thicknesses of "CoFe" around "Ru" spacer are equal and changed together to keep the magnetic thickness of the pinned layer fixed while changing the sense current fraction shunted through the pinned layer.

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