Browse Prior Art Database

Method for Inductive Coil Fabrication

IP.com Disclosure Number: IPCOM000013981D
Original Publication Date: 2000-Dec-01
Included in the Prior Art Database: 2003-Jun-19
Document File: 2 page(s) / 47K

Publishing Venue

IBM

Abstract

This disclosure discusses a process to create high aspect ratio structures separated by a thin insulating vertical barrier. The preferred embodiment would be accomplished by forming a thin, uniform, and conformal silicon oxide film over a lithographically defined step via decomposition of TEOS (tetraethylorthosilicate). An oxide sidewall mask would subsequently be used as a barrier material which would be reactively ion etched and replaced with a polymeric insulator.

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Method for Inductive Coil Fabrication

   This disclosure discusses a process to create high aspect ratio structures separated by a thin insulating vertical barrier. The preferred embodiment would be accomplished by forming a thin, uniform, and conformal silicon oxide film over a lithographically defined step via decomposition of TEOS (tetraethylorthosilicate). An oxide sidewall mask would subsequently be used as a barrier material which would be reactively ion etched and replaced with a polymeric insulator.

   One skilled in the art of vacuum deposition of thin films could deposit a low temperature TEOS thin film.[1] This conformally covers a lithographically defined structure with silicon oxide. This thin film would then be subjected to a brief anisotropic etch which would primarily remove the horizontal surfaces of the oxide film. Filling the voids with a polymer (e.g. photoresist) allows for the exposure of the sidewall. Sidewall exposure may be accomplished with the addition of a mechanical planarization step or surface sputtering step.

Patterned stru ctu re

etchable underlayer or seedlayer

su b strate lay er(s)

c o n fo rm a l in s u la tin g la y e r (e .g .T E O S )

     The exposure of the oxide sidewall allows for the reactive ion etching of the oxide to expose the etchable underlayer. The underlayer may be etchable by the same etching conditions used to remove the oxide sidewall. Another possibility is the chemical etching of the underlayer (shown below) which wou...