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DUAL GMR SENSOR WITH CANTED PINNED MAGNETIZATION

IP.com Disclosure Number: IPCOM000013998D
Original Publication Date: 2000-Apr-01
Included in the Prior Art Database: 2003-Jun-19
Document File: 2 page(s) / 41K

Publishing Venue

IBM

Abstract

The dual GMR sensor cross-section is shown in Figure 1. The pinned ferromagnetic layers next to the "Cu" spacer are usually thicker than the pinned layers next to the antiferromagnetic layers in order to achieve higher GMR coefficient. For negative coupling between the FREE and the PINNED layers, this configuration leads to improper biasing of the FREE layer magnetization. This is due to the fact that the coupling field and the demagnetizing fields from the pinned layers add and bias the FREE layer magnetization away for the optimum bias configuration relative to the pinned magnetization (old location). By canting the pinned magnetizations to a new orientation, the angle between the pinned and free magnetizations can be made 90 degree and therefore near zero read signal asymmetry can be achieved. Figure 1 1 2

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DUAL GMR SENSOR WITH CANTED PINNED MAGNETIZATION

   The dual GMR sensor cross-section is shown in Figure 1. The pinned
ferromagnetic layers next to the "Cu" spacer are usually thicker than the pinned
layers next to the antiferromagnetic layers in order to achieve higher GMR
coefficient. For negative coupling between the FREE and the PINNED layers, this
configuration leads to improper biasing of the FREE layer magnetization. This is
due to the fact that the coupling field and the demagnetizing fields from the
pinned layers add and bias the FREE layer magnetization away for the optimum bias
configuration relative to the pinned magnetization (old location). By canting the
pinned magnetizations to a new orientation, the angle between the pinned and free
magnetizations can be made 90 degree and therefore near zero read signal
asymmetry can be achieved.

Figure 1

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