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Rapid Giant MR/Spin Valve Initialization Process Via Pulse Heating

IP.com Disclosure Number: IPCOM000014333D
Original Publication Date: 1999-Oct-01
Included in the Prior Art Database: 2003-Jun-19
Document File: 1 page(s) / 36K

Publishing Venue

IBM

Related People

Joseph Fatula: AUTHOR [+5]

Abstract

Process: The wafer is heated with optical pulse energy 51g. 100NS 300 M Sec to critical temperature. The magnet remains on as the wafer cools below critical temperature.

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Rapid Giant MR/Spin Valve Initialization Process Via Pulse Heating

   Process: The wafer is heated with optical pulse energy 51g. 100NS - 300 M Sec to critical temperature. The magnet remains on as the wafer cools below critical temperature.

Advantage: The heat up/ cool down cycle is limited by optical energy pulse, not wafer mass.

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