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ION BEAM ASSISTED NIO DEPOSITION

IP.com Disclosure Number: IPCOM000014413D
Original Publication Date: 2000-Apr-01
Included in the Prior Art Database: 2003-Jun-19
Document File: 1 page(s) / 24K

Publishing Venue

IBM

Abstract

NiO antiferromagnet material is usually deposited from NiO targets for spin valve applications. Blocking temperature and blocking temperature distribution of the thin films deposited from NiO targets is poor for GMR head applications. The NiO films are also deposited from an Ni target in the presence of oxygen with improved properties. In order to improve the properties of the NiO antiferromagnetic material further, a new process is described where low energy oxygen ions are used to bombard the growing film during deposition. The spin valve structure is antiparallel-pinned (NiO/NiFe/CoFe/Ru/CoFe/Cu/CoFe/NiFe/Ta or simple type and the NiO film is around 400 A). The deposition of the NiO film is done from an Ni target (NiO target can also be used) using the deposition ion gun and an inert gas while the second ion gun is directed toward the substrate to bombard the growing film with low energy oxygen ions. The low energy of oxygen ions do not damage the growing film while enhancing the density of the NiO film. 1

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ION BEAM ASSISTED NIO DEPOSITION

   NiO antiferromagnet material is usually deposited from NiO targets for spin
valve applications. Blocking temperature and blocking temperature distribution
of the thin films deposited from NiO targets is poor for GMR head applications.
The NiO films are also deposited from an Ni target in the presence of oxygen with
improved properties. In order to improve the properties of the NiO
antiferromagnetic material further, a new process is described where low energy
oxygen ions are used to bombard the growing film during deposition. The spin
valve structure is antiparallel-pinned (NiO/NiFe/CoFe/Ru/CoFe/Cu/CoFe/NiFe/Ta or
simple type and the NiO film is around 400 A). The deposition of the NiO film is
done from an Ni target (NiO target can also be used) using the deposition ion gun
and an inert gas while the second ion gun is directed toward the substrate to
bombard the growing film with low energy oxygen ions. The low energy of oxygen
ions do not damage the growing film while enhancing the density of the NiO film.

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