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Light Shield structure for Top Gate TFT-LCD

IP.com Disclosure Number: IPCOM000014608D
Original Publication Date: 2000-Mar-01
Included in the Prior Art Database: 2003-Jun-20
Document File: 1 page(s) / 38K

Publishing Venue

IBM

Abstract

Described herewith is the structure of TFT/LCD pixel which realize light-shield to reduce a-Si layer photo current induced by back light radiation with electrically separated metal layer. Pixel configuration is shown in the Figure .

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Light Shield structure for Top Gate TFT-LCD

    Described herewith is the structure of TFT/LCD pixel which realize
light-shield to reduce a-Si layer photo current induced by back light radiation
with electrically separated metal layer. Pixel configuration is shown in the
Figure .

    A-Si layer exists under Gate Line. Photo-induced leakage current flows
between adjacent signal lines and this degrade displayed picture quality. To
prevent this, Light-shield exists under Gate-line/a-Si pattern. Light-shield is
made with metal layer and electrically separeted. To prevent light incidence
through this light-shield separated portion, additional light-shield pattern is
fabricated with different metal layer which is insulated from main light-shield
layer such as signal-line(SL) layer.

Light shield SL layer

Gate Line

1

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