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The Texture-controlled Sputtering of Titanium for Low Temperature Silicidation Process

IP.com Disclosure Number: IPCOM000014725D
Original Publication Date: 2000-Aug-01
Included in the Prior Art Database: 2003-Jun-20
Document File: 4 page(s) / 85K

Publishing Venue

IBM

Abstract

Recently, the silicidation process is adopted in semiconductor manufacturing process. It is one of the most effective process to decrease the resistance of Poly/diffusion line. However, process margin is becoming smaller because of two reasons. First, the wiring in the semiconductor chip will become very narrow approximately less than 0.5 micron) to increase density of circuit. In this case, the minimum temperature to convert C49 phase to C54 phase is increased. Second, thin silicide layer is required due to shallow junction. In this case, the maximum temperature to convert from C49 phase to C54 phase is decreased. As a result, process margin is very small. see Figure 1. Sheet resistance Narrow line Thin film

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Page 1 of 4

  The Texture-controlled Sputtering of Titanium for Low Temperature Silicidation Process

     Recently, the silicidation process is adopted in semiconductor
manufacturing process. It is one of the most effective process to
decrease the resistance of Poly/diffusion line. However, process
margin is becoming smaller because of two reasons. First, the
wiring in the semiconductor chip will become very narrow (
approximately less than 0.5 micron) to increase density of circuit.
In this case, the minimum temperature to convert C49 phase to C54
phase is increased. Second, thin silicide layer is required due to
shallow junction. In this case, the maximum temperature to convert
from C49 phase to C54 phase is decreased. As a result, process
margin is very small. see Figure 1.

Sheet resistance

Narrow line

Thin film

Process margin

Fig 1. Process margin as a function of temperature for silicide
conversion from C49 phase to C54 phase.

   We propose "the texture controlled titanium sputtering" in order
to expand the process margin. Figure 2 shows the result of In-situ
X-ray diffraction analysis for two type samples. The two types of
wafers were analyzed at the national laboratory located in Yoktown
USA. In-situX-ray diffraction analysis was used, which revealed
that each as-deposited titanium microstructure was slightly
different. For both samples, the Ti(002) orientation dominates.

1

Spec. limit

Temperature

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Page 2 of 4

However, for sample #2, there is a small Ti(100) peak while the
sample #4 sh...