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DUAL GMR SENSOR WITH LARGER SHEET RESISTANCE

IP.com Disclosure Number: IPCOM000014760D
Original Publication Date: 2000-Apr-01
Included in the Prior Art Database: 2003-Jun-20
Document File: 1 page(s) / 25K

Publishing Venue

IBM

Abstract

A dual GMR sensor offers large magnetoresistance ratio. However, sheet resistance of the head drops for DUAL sensors due to increase of total thickness. The prior art DUAL sensors use the following configuration:

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DUAL GMR SENSOR WITH LARGER SHEET RESISTANCE

   A dual GMR sensor offers large magnetoresistance ratio. However, sheet
resistance of the head drops for DUAL sensors due to increase of total thickness.
The prior art DUAL sensors use the following configuration:

Ta/PtMn/Co90Fe10/Ru/Co90Fe10/Cu/Co90Fe10/NiFe/Co90Fe10/Cu/Co90Fe10/Ru/Co90Fe10/Pt
Mn/Ta

Embodiment 1:

Ta/PtMn/Co50Fe50/Ru/Co50Fe50/Cu/Co90Fe10/NiFe/Co90Fe10/Cu/Co50Fe50/Ru/Co50Fe50/Pt
Mn/Ta

Note that Co90Fe10 is replaced with Co50Fe50 in the pinned layer. The moment of
Co50Fe50 is about 50% larger than Co90Fe10. Thus pinned layer thicknesses can be
reduced to about half of their value with Co90Fe10 alloy. This increases the
sheet resistance and the magnetoresistance ratio of these structures.

Embodiment 2:

Ta/PtMn/Co50Fe50/Ru/Co50Fe50/Cu/Co90Fe10/NiFeMo/Co90Fe10/Cu/Co50Fe50/Ru/Co50Fe50/
PtMn/Ta

NiFe is replaced with NiFeMo to enhance the sheet resistance due to higher sheet
resistance of NiFeMo.

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