Browse Prior Art Database

In-Stack HB Structure for Tunnel Valve

IP.com Disclosure Number: IPCOM000014970D
Original Publication Date: 2001-Aug-01
Included in the Prior Art Database: 2003-Jun-20
Document File: 1 page(s) / 38K

Publishing Venue

IBM

Abstract

Disclosed an in-stack type stabilization structure for the tunnel valve head. The structure uses high Hc material (e.g. CoPtCr) put on top or under the free layer to provide magnetostatic bias to the free layer for magnetic stabilization. To achieve high Hc for CoPtCr, a seed layer of either Fe90Cr10 or amorphous material (e.g. CoNbZr) is recommended. These seed layers assure achievement of BCC crystal structure in CoPtCr for high Hc.

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In-Stack HB Structure for Tunnel Valve

   Disclosed an in-stack type stabilization structure for the tunnel valve head. The structure uses high Hc material (e.g. CoPtCr) put on top or under the free layer to provide magnetostatic bias to the free layer for magnetic stabilization. To achieve high Hc for CoPtCr, a seed layer of either Fe90Cr10 or amorphous material (e.g. CoNbZr) is recommended. These seed layers assure achievement of BCC crystal structure in CoPtCr for high Hc.

The structure of the tunnel valve with high Hc material is as follows:

     Shield 1/Ta/PtMn/CoFe/Ru/CoFe/AlOx, barrier/CoFe/NiFe/Ta/CoFe/Fe90Cr10/CoPtCr/Ta/Shield 2 It is also possible to replace {CoFe/Fe90Cr10} under the CoPtCr with CoNbZr.

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