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High deltaR/R GMR structure

IP.com Disclosure Number: IPCOM000015081D
Original Publication Date: 2001-Sep-01
Included in the Prior Art Database: 2003-Jun-20
Document File: 1 page(s) / 37K

Publishing Venue

IBM

Abstract

Disclosed is a new structure for the GMR head which utilizes ferromagnetic films both above and below the antiferromagnetic film pinning film. Using both surfaces of the antiferromagnet for pinning, deltaR/R is enhanced while free layer biasing is maintained. The structure is as follows:

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High deltaR/R GMR structure

   Disclosed is a new structure for the GMR head which utilizes ferromagnetic films both above and below the antiferromagnetic film pinning film. Using both surfaces of the antiferromagnet for pinning, deltaR/R is enhanced while free layer biasing is maintained. The structure is as follows:

Seed/FM1/AFM/FM2/Ru/FM3/Cu/FM4/FM5/CuO/Ta

Since both surfaces of the AFM (e.g. PtMn) are independently pinning the ferromagnetic layers: FM1 and FM2, high pinning strength and high deltaR/R are possible. Using thicker FM3 and thinner FM2 layer gives higher deltaR/R, however, this configuration puts more demagnetization on the free layer. It is possible to cancel this increase in demagnetizing field by providing FM1 layer under the AFM, the demagnetizing field of FM1 opposes that of (FM3-FM2) at the free layer. Therefore high deltaR/R and proper biasing of the free layer are possible.

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