Browse Prior Art Database

Silicide Line Formation Technology by using Si Implant on Saliside Process

IP.com Disclosure Number: IPCOM000015175D
Original Publication Date: 2002-Jun-01
Included in the Prior Art Database: 2003-Jun-20
Document File: 4 page(s) / 126K

Publishing Venue

IBM

Abstract

Disclosed is a method to fablicate silicide lines of salicide process. This method is realized by using Si (or F) implantation on standard MOS process. A process sequence to manufacture the silicide line is shown by Fig. 1 and · 2. 1

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Silicide Line Formation Technology by using Si Implant on Saliside Process

Disclosed is a method to fablicate silicide lines of salicide process.

This method is realized by using Si (or F) implantation on standard MOS process.

A process sequence to manufacture the silicide line is shown by Fig. 1 and ·2.

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