Browse Prior Art Database

SELF-PINNED GMR HEAD STRUCTURE

IP.com Disclosure Number: IPCOM000015199D
Original Publication Date: 2001-Sep-10
Included in the Prior Art Database: 2003-Jun-20
Document File: 1 page(s) / 35K

Publishing Venue

IBM

Abstract

Disclosed is a method for pinning of GMR pinned layer without use of antiferromagnet. Antiferromagnet is very commonly used as the pinning layer for the pinned layer using exchange coupling between the antiferromagnet and the ferromagnetic layer. However, conductive antiferromagnetic layer causes some shunting of the sense current and thereby reduces dR/R of the structure as well as adds to overall thickness of the GMR stack. Disclosed is that the GMR structure: seed/FM1/Ru/FM2/Cu/Free layer/Cap can be pinned without using antiferromagnet. The layer FM1 is made thicker than FM2. The direction of the sense current is selected so that its field favors the magnetization of the "FM1" layer. By doing this, the magnetization of the FM1 layer experiences the maximum torque from the field of the sense current which helps in pinning. 1

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SELF-PINNED GMR HEAD STRUCTURE

    Disclosed is a method for pinning of GMR pinned layer without use of antiferromagnet. Antiferromagnet is very commonly used as the pinning layer for the pinned layer using exchange coupling between the antiferromagnet and the ferromagnetic layer. However, conductive antiferromagnetic layer causes some shunting of the sense current and thereby reduces dR/R of the structure as well as adds to overall thickness of the GMR stack. Disclosed is that the GMR structure: seed/FM1/Ru/FM2/Cu/Free layer/Cap can be pinned without using antiferromagnet. The layer FM1 is made thicker than FM2. The direction of the sense current is selected so that its field favors the magnetization of the "FM1" layer. By doing this, the magnetization of the FM1 layer experiences the maximum torque from the field of the sense current which helps in pinning.

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