Browse Prior Art Database

SELF-PINNED TUNNEL VALVE HEAD

IP.com Disclosure Number: IPCOM000015227D
Original Publication Date: 2001-Dec-25
Included in the Prior Art Database: 2003-Jun-20
Document File: 1 page(s) / 35K

Publishing Venue

IBM

Abstract

We disclose a Tunnel Valve head where pinned layer pinning is achieved without using an antiferromagnetic layer. The structure is as follows: Shield/Ta/Co50Fe50/Ru/Co50Fe50/Barrier/Co90Fe10/Ta/S2. The high positive magnetostriction of the pinned layer material (Co50Fe50) in conjunction with the compressive stress at the air bearing surface (1x10E10 dynes/cm2) induces magnetic anisotropy perpendicular to the air bearing surface of the head. The induced anisotropy in excess of 200 Oe by this mechanism is sufficient to achieve pinning. The elimination of the antiferromagnetic allows thinner Tunnel Valve sensor stack for future short gap heads as well as simplifies the head fabrication. 1

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

SELF-PINNED TUNNEL VALVE HEAD

   We disclose a Tunnel Valve head where pinned layer pinning is achieved without using an antiferromagnetic layer. The structure is as follows:

Shield/Ta/Co50Fe50/Ru/Co50Fe50/Barrier/Co90Fe10/Ta/S2. The high positive magnetostriction of the pinned layer material (Co50Fe50) in conjunction with the compressive stress at the air bearing surface (1x10E10 dynes/cm2) induces magnetic anisotropy perpendicular to the air bearing surface of the head. The induced anisotropy in excess of 200 Oe by this mechanism is sufficient to achieve pinning. The elimination of the antiferromagnetic allows thinner Tunnel Valve sensor stack for future short gap heads as well as simplifies the head fabrication.

1