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SELF-PINNED IN-STACK BIAS STRUCTURE

IP.com Disclosure Number: IPCOM000015301D
Original Publication Date: 2001-Dec-25
Included in the Prior Art Database: 2003-Jun-20
Document File: 1 page(s) / 36K

Publishing Venue

IBM

Abstract

We disclose here Self-Pinned In-stack bias structure for GMR and Tunnel Valve heads. The example structure for Tunnel Valve is shown below: S1/Lead/seed/PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe/spacer/FM(1)/Ru/FM(2)/Ru/FM(3)/Cap/S2. FM layers are chosen to have negative magnetostriction constant. This magnetostriction in-conjunction with compressive stress at the air bearing surface induces large stress induced anisotropy to pin these films parallel to the air bearing surface. The magnetization of layer FM(2) is antiparallel to those of layers FM(1) and FM(3). The sum of magneto-static fields from FM(1) and FM(3) biases the Free layer for domain control. 1

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SELF-PINNED IN-STACK BIAS STRUCTURE

    We disclose here Self-Pinned In-stack bias structure for GMR and Tunnel Valve heads. The example structure for Tunnel Valve is shown below:

S1/Lead/seed/PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe/spacer/FM(1)/Ru/FM(2)/Ru/FM(3)/Cap/S2. FM layers are chosen to have negative magnetostriction constant. This magnetostriction in-conjunction with compressive stress at the air bearing surface induces large stress induced anisotropy to pin these films parallel to the air bearing surface. The magnetization of layer FM(2) is antiparallel to those of layers FM(1) and FM(3). The sum of magneto-static fields from FM(1) and FM(3) biases the Free layer for domain control.

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