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Definition of write gap in recording head with plating and ion-implantation

IP.com Disclosure Number: IPCOM000015367D
Original Publication Date: 2002-Feb-15
Included in the Prior Art Database: 2003-Jun-20
Document File: 3 page(s) / 43K

Publishing Venue

IBM

Abstract

A novel approach to manufacture high aspect ratio magnetic pole tip utilizing ion implantation is disclosed here. A complete pole structure is shown schematically in Figure 1. Pole tip P2 is magnetically separated from P1 by a thin layer of magnetic insulator. A key feature is the step etched into P1 (the notch) for improved magnetic flux confinement. Current manufacturing process entails initial formation of P2 structure with height of over two times the final height. This is to facilitate "notching" of P1 (the step formation through the insulating layer) and trimming for width control by ion-milling. The poor selectivity of this process necessitates that the initial P2 height to greater than 4mm despite final P2 height requirement of only about 2mm.

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Definition of write gap in recording head with plating and ion-implantation

A novel approach to manufacture high aspect ratio magnetic pole tip utilizing ion implantation is disclosed here. A complete pole structure is shown schematically in Figure 1. Pole tip P2 is magnetically separated from P1 by a thin layer of magnetic insulator. A key feature is the step etched into P1 (the notch) for improved magnetic flux confinement. Current manufacturing process entails initial formation of P2 structure with height of over two times the final height. This is to facilitate "notching" of P1 (the step formation through the insulating layer) and trimming for width control by ion-milling. The poor selectivity of this process necessitates that the initial P2 height to greater than 4mm despite final P2 height requirement of only about 2mm.

Figure 1: Final Structure

P2 (height ~ 2um, width <0.35um)

Notch (~200nm)

This invention embodies a methodology for constructing the final structures directly i.e. the process bypasses the need to form the additional P2 sacrificial height. Specifically, the magnetically insulating layer is formed by an implantation step instead of ion-milling. Figure 2 illustrates a potential process flow.

Figure 2: Process Flow

Magnetic Gap (~160nm)

P1

~2um resist

P1

1. Coat ~2um resist on P1 layer

1

[This page contains 2 pictures or other non-text objects]

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2. Image P2 - high kV e-beam or image X'fer

3. Partial plating - notch formation

4. Ion-implantation - create a non-

magnetic layer

5. Continue plating to form P2. Anneal if

necessary.

6. Strip resist.

The novelty of this approach is in step 4 whereby a cont...