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DUAL CPP GMR STRUCTURE

IP.com Disclosure Number: IPCOM000015551D
Original Publication Date: 2002-Jan-07
Included in the Prior Art Database: 2003-Jun-20
Document File: 1 page(s) / 34K

Publishing Venue

IBM

Abstract

To enhance magnetoresistance and resistance of the CPP GMR structure, we disclose the use of nano-oxide layer (NOL) in both Free and pinned layers. The structure is as follows: S1/PtMn/CoFe/Ru/CoFe/NOL/CoFe/Cu/CoFe/NOL/CoFe/Cu/CoFe/NOL/CoFe/Ru/CoFe/Pt Mn/S2.. In-addition, further improvement is possible by oxidizing the cooper spacers and ruthenium spacers . In this structure , S1 and S2 layers are ferromagnetic shields and also serve as the leads for carrying current. Additional conducting leads such as cooper, gold etc can be provided between S1/S2 and the sensor.

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DUAL CPP GMR STRUCTURE

To enhance magnetoresistance and resistance of the CPP GMR structure, we disclose the use of nano-oxide layer (NOL) in both Free and pinned layers. The structure is as follows: S1/PtMn/CoFe/Ru/CoFe/NOL/CoFe/Cu/CoFe/NOL/CoFe/Cu/CoFe/NOL/CoFe/Ru/CoFe/Pt Mn/S2.. In-addition, further improvement is possible by oxidizing the cooper spacers and ruthenium spacers . In this structure , S1 and S2 layers are ferromagnetic shields and also serve as the leads for carrying current. Additional conducting leads such as cooper, gold etc can be provided between S1/S2 and the sensor.

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