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NEW STABILIZATION TECHNIQUE FOR THE GMR HEAD

IP.com Disclosure Number: IPCOM000015555D
Original Publication Date: 2002-Jan-07
Included in the Prior Art Database: 2003-Jun-20
Document File: 1 page(s) / 37K

Publishing Venue

IBM

Abstract

We disclose a new structure to stabilize the free layer of the GMR head. The structure is as follows: Al2O3/NiFeCr/PtMn/CoFe/Ru/CoFe/Cu/CoFe/Cu/Al2O3/CoSm/Ta. The CoFe layer between the "Cu" and "Cu/Al2O3" spacers is the free layer. The high coercivity layer "CoSm" is magnetized parallel to air bearing surface to provide longitudinal bia to the free layer for magnetic stabilization. The CoSm layer has high resistivity, greater than 100 micro Ohm cm and therefore causes less current shunting. The spacer layer "Cu/Al2O3" also contributes to enhance magnetoresistance through specular scattering.

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NEW STABILIZATION TECHNIQUE FOR THE GMR HEAD

We disclose a new structure to stabilize the free layer of the GMR head. The structure is as follows: Al2O3/NiFeCr/PtMn/CoFe/Ru/CoFe/Cu/CoFe/Cu/Al2O3/CoSm/Ta. The CoFe layer between the "Cu" and "Cu/Al2O3" spacers is the free layer. The high coercivity layer "CoSm" is magnetized parallel to air bearing surface to provide longitudinal bia to the free layer for magnetic stabilization. The CoSm layer has high resistivity, greater than 100 micro Ohm cm and therefore causes less current shunting. The spacer layer "Cu/Al2O3" also contributes to enhance magnetoresistance through specular scattering.

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