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AP FREE LAYER CONSTRUCTION FOR DUAL GMR

IP.com Disclosure Number: IPCOM000015591D
Original Publication Date: 2002-Jan-07
Included in the Prior Art Database: 2003-Jun-20
Document File: 1 page(s) / 34K

Publishing Venue

IBM

Abstract

We disclose a new structure for the Free layer layer of the GMR sensor to enhance magnetoresistance. The structure is as follows: PtMn/CoFe/Ru/CoFe/Cu/CoFe/Ru/CoFeNiO/Ru/CoFe/Cu/CoFe/Ru/CoFe/PtMn. The layers between the "Cu" spacers make the free layer. The CoFeNiO layer between the "Ru" spacers enhances magnetoresistance through specular scattering and by reducing current shunting. 1

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AP FREE LAYER CONSTRUCTION FOR DUAL GMR

We disclose a new structure for the Free layer layer of the GMR sensor to enhance magnetoresistance. The structure is as follows: PtMn/CoFe/Ru/CoFe/Cu/CoFe/Ru/CoFeNiO/Ru/CoFe/Cu/CoFe/Ru/CoFe/PtMn. The layers between the "Cu" spacers make the free layer. The CoFeNiO layer between the "Ru" spacers enhances magnetoresistance through specular scattering and by reducing current shunting.

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