Dismiss
InnovationQ will be updated on Sunday, Oct. 22, from 10am ET - noon. You may experience brief service interruptions during that time.
Browse Prior Art Database

SPIN VALVE TRANSISTOR WITH THINNER BASE LAYER

IP.com Disclosure Number: IPCOM000015592D
Original Publication Date: 2002-Jan-07
Included in the Prior Art Database: 2003-Jun-20
Document File: 1 page(s) / 33K

Publishing Venue

IBM

Abstract

We disclose a structure for Spin Valve for application to Spin Valve Transistor. The structure is as follows:Emitter/Ru/Co/Cu/CoFe/Cu/Collector. The "Ru" metal has HCP structure and enhances the magnetocrystalline Hk of the "Co" layer for pinning purpose. The "Cu" cap isolates the spin valve from the collector as well as enhances the soft magnetic properties of the free layer. 1

This text was extracted from a PDF file.
This is the abbreviated version, containing approximately 100% of the total text.

Page 1 of 1

SPIN VALVE TRANSISTOR WITH THINNER BASE LAYER

We disclose a structure for Spin Valve for application to Spin Valve Transistor. The structure is as follows:Emitter/Ru/Co/Cu/CoFe/Cu/Collector. The "Ru" metal has HCP structure and enhances the magnetocrystalline Hk of the "Co" layer for pinning purpose. The "Cu" cap isolates the spin valve from the collector as well as enhances the soft magnetic properties of the free layer.

1